SiC is a promising material for nuclear applications and is a critical component in the construction of tristructural isotropic (TRISO) fuel. A primary issue with TRISO fuel operation is the observed release of 110mAg from intact fuel particles. The release of Ag has prompted research efforts to directly measure the transport mechanism of Ag in bulk SiC. Recent experimental efforts have focused primarily on Ag ion implantation designs. The effect of the thermal exposure system on the ion implantation surface has been investigated. Results indicate the utilization of a mated sample geometry and the establishment of a static thermal exposure environment is critical to maintaining an intact surface for diffusion analysis. The nature of the implantation surface and its potential role in Ag diffusion analysis are discussed.